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LMV358IDR Suppliers

HBLSA-SRAM bit line can not only reduce the voltage swing, but also can effectively reduce the bit line capacitance load. bit line depends largely on the bit line load capacitance connected to the number of MOS tube. shown in Figure 1, in each Group M in a storage unit, and LMV358IDR Suppliers and a total of N-Group, so a total of M × N a storage unit. For a conventional SRAM structure of such a capacity, then the bit line will take a total of M × N a MOS pipe. but HBLSA-SRAM, it will be connected to the thematic lines and local area MOS pipe lines together also, but N + M +5 months. which, for a total of thematic lines connected N-MOS pipe, while the Council total connection line parts of a MOS pipe M +5, M M a storage unit for the transmission tube, and 1-wire connection from the MOS and Theme tube, the other 4 from the local sensitive amplifier. So, not only significantly lower bit line swing, and the bit line capacitance of the load also fell.

LMV358IDR Price

-bit SRAM bit line multi-level structure and LMV358IDR Price and working principle hown in Figure 1, multi-level bit line SRAM (HBLSA-SRAM) The main principle is to use two-bit line and local sense amplifier to make the write cycle of thematic lines, BL and BLB the voltage swing is a very small value, and through the local sensitivity This voltage is amplified amplifier to 0 for the big swing VDD signal input to the Bureau of parts online. In this way, bit line voltage swing reduction, and O VDD to write a big swing to ensure a sufficient write margin.

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