SiteMapBTS5215LPC725VAD8063ART-REEL7SC1480IKA22425DTVP5020CPFPMC10171LADS8505IBDBCM100DY-24HSP5511S Quick Search: 304 GRM TL8 FTS TXC M95 SV1 TA2 MN3 TCE RL5 FDA 724 TYN
Position:Home » DataSheet » STP Page No. 4 » STP3NK60Z Suppliers

STP3NK60Z datasheet pdf datenblatt

STP3NK60Z SuppliersSTP3NK60Z PriceRelated PDF DownLoad


Iron Man chassis technology development since its listing thunder unabated, there is repeated many times that running out of hot scenes of arrival, so that the chassis on the market for a Man hard to find. Now again, after the arrival of the full charm of Iron Man continues unabated, the old myth is not staged.

STP3NK60Z Suppliers

New Japan Radio has successfully developed NJG1128HB6, and STP3NK60Z Suppliers and began sample shipments. NJG1128HB6 bypass circuit is equipped with low-noise amplifier GaAsMMIC, optimized for 450MHz band CDMA phone. High-frequency circuits using CMOS technology to achieve the low noise amplifier built CMOSRFIC difficult, requiring an external high-performance low-noise amplifier. The NJG1128HB6 was able to address the issue. The low-noise amplifier equipped with a bypass circuit, mainly for the 450MHz band CDMA phone. NJG1128HB6 by the low noise amplifier, the bypass circuit and control logic circuits to achieve the IIP3 = +8 dBmmin. @ 460-470MHz (high-gain mode), low distortion characteristics, simplifying the signal receiving circuit. When the field entered in the normal state, through the built-in low noise amplifier for RF signals increase (high-gain mode). When the input state in the strong electric field, because no increase in the signal, so there is not NJG1128HB6 also built a bypass through the low-noise amplifier circuit, the low-noise amplifier in standby mode at this point, in order to achieve the low current consumption (low gain mode). The high and low gain mode switch control logic circuit by a 1-bit control signal can be achieved using the microprocessor to control. NJG1128HB6 has the following characteristics, for 450MHz band CDMA mobile phone low-noise amplifier: ① HJFET process used to achieve high linearity. IIP3 = +8 dBm (min.) @ high gain mode / IIP3 = +15 dBm (min.) @ low gain mode ② achieve low gain mode 15μA (typ.) of the low current consumption. ③ built-in control logic circuit, easy to switch modes (control voltage "High" = high-gain mode) in April 2007 began issuing NJG1128HB6 samples officially put into production in June, after the scheduled monthly production of 30 million. Sample price is 50 yen.

STP3NK60Z Price

Of course, this is not in the Symbian platform to avoid the problem, just like people have been talking about that, Symbian platform, you need a better, more convenient development tools, need a more simple easy to use software sales model and STP3NK60Z Price and platform. In other words, is to allow developers to quickly indeed get economic returns. Now, N8 come, Symbian ^ 3 is here. Anyway, Symbian ^ 3 the improvement is undeniable. The response so developers will do? Perhaps the next few months, we will see the results.

All rights © 2010-2016